The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Mar. 19, 2008
Do-hyung Kim, Gyeonggi-do, KR;
Shin-jae Kang, Gyeonggi-do, KR;
In-sun Park, Gyeonggi-do, KR;
Hyun-seok Lim, Gyeonggi-do, KR;
Gyu-hwan OH, Gyeonggi-do, KR;
Do-Hyung Kim, Gyeonggi-do, KR;
Shin-Jae Kang, Gyeonggi-do, KR;
In-Sun Park, Gyeonggi-do, KR;
Hyun-Seok Lim, Gyeonggi-do, KR;
Gyu-Hwan Oh, Gyeonggi-do, KR;
Abstract
The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.