The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Dec. 11, 2009
Susumu Okamura, Kanagawa, JP;
Yo Sato, Kanagawa, JP;
Katsumi Hoshino, Kanagawa, JP;
Hiroyuki Hoshiya, Kanagawa, JP;
Kenichi Meguro, Kanagawa, JP;
Keizo Kato, Tokyo, JP;
Susumu Okamura, Kanagawa, JP;
Yo Sato, Kanagawa, JP;
Katsumi Hoshino, Kanagawa, JP;
Hiroyuki Hoshiya, Kanagawa, JP;
Kenichi Meguro, Kanagawa, JP;
Keizo Kato, Tokyo, JP;
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X—Y—Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.