Semiconductor device, its manufacturing method, and sputtering target material for use in the method

Abstract

A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor deviceprovided on an insulating filmwith a wiring includes the insulating filmcontaining silicon (Si), a wiring main bodyformed of copper (Cu) in a groove-like openingdisposed in the insulating film, and a barrier layerformed between the wiring main bodyand the insulating filmand made of an oxide containing Cu and Si and Mn in such a manner that the atomic concentration of Cu decreases monotonously from the wiring main bodyside toward the insulating filmside, the atomic concentration of Si decreases monotonously from the insulating filmside toward the wiring main bodyside, and the atomic concentration of Mn is maximized in the region in which the atomic concentration of Cu and the atomic concentration of Si are approximately equal.