The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Jan. 21, 2010
Kuo-hua Chen, Kaohsiung, TW;
Kuo-pin Yang, Kaohsiung, TW;
Kuo-Hua Chen, Kaohsiung, TW;
Kuo-Pin Yang, Kaohsiung, TW;
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Abstract
The present invention relates to a silicon substrate having through vias and a package having the same. The silicon substrate includes a substrate body, a plurality of through vias and at least one heat dissipating area. The substrate body has a surface, and the material of the substrate body is silicon. The through vias penetrate the substrate body, and each of the through vias has a conductive material therein. The heat dissipating area is disposed on the surface of the substrate body and covers at least two through vias. The heat dissipating area is made of metal, and the through vias inside the heat dissipating area have same electrical potential. Thus, the heat in the through vias is transmitted to the heat dissipating area, and since the area of the heat dissipating area is large, the silicon substrate has good heat dissipation efficiency.