The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Sep. 30, 2008
Lieyong Yang, Singapore, SG;
Siau Ben Chiah, Singapore, SG;
Ming Lei, Singapore, SG;
Hua Xiao, Singapore, SG;
Xiongfei Yu, Singapore, SG;
Kelvin Tianpeng Guan, Singapore, SG;
Puay San Chia, Singapore, SG;
Chor Shu Cheng, Singapore, SG;
Gary Chia, Singapore, SG;
Chee Kong Leong, Singapore, SG;
Sean Lian, Berne, NY (US);
Kin San Pey, Singapore, SG;
Chao Yong LI, Singapore, SG;
Lieyong Yang, Singapore, SG;
Siau Ben Chiah, Singapore, SG;
Ming Lei, Singapore, SG;
Hua Xiao, Singapore, SG;
Xiongfei Yu, Singapore, SG;
Kelvin Tianpeng Guan, Singapore, SG;
Puay San Chia, Singapore, SG;
Chor Shu Cheng, Singapore, SG;
Gary Chia, Singapore, SG;
Chee Kong Leong, Singapore, SG;
Sean Lian, Berne, NY (US);
Kin San Pey, Singapore, SG;
Chao Yong Li, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.