The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Nov. 21, 2008
Chien-fu Shen, Hsinchu, TW;
Cheng-ta Kuo, Hsinchu, TW;
Wei-shou Chen, Hsinchu, TW;
Tsung-hsien Liu, Hsinchu, TW;
Yi-wen Ku, Hsinchu, TW;
Min-hsun Hsieh, Hsinchu, TW;
Chien-Fu Shen, Hsinchu, TW;
Cheng-Ta Kuo, Hsinchu, TW;
Wei-Shou Chen, Hsinchu, TW;
Tsung-Hsien Liu, Hsinchu, TW;
Yi-Wen Ku, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Epistar Corporation, , TW;
Abstract
A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×10μmand 6.2×10μm.