The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
May. 22, 2006
Takehisa Sato, Isehara, JP;
Kiyoshi Kato, Isehara, JP;
Takehisa Sato, Isehara, JP;
Kiyoshi Kato, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
When an electrode is formed over an organic layer, a temperature is limited because the organic layer can be influenced depending on a temperature in forming the electrode. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. The present invention provides a structure of an organic memory element in which two electrodes are provided in the same layer as two terminals of the memory element, and a layer containing an organic compound is provided between the electrodes. By narrowing a distance between the two electrodes, writing can be performed at low voltage. In addition, a structure of the memory element is simplified, and the area of the memory element can be reduced.