The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Sep. 16, 2011
Masami Shibagaki, Fuchu, JP;
Masataka Satoh, Sagamihara, JP;
Akemi Satoh, Legal Representative, Sagamihara, JP;
Takahiro Sugimoto, Yokohama, JP;
Masami Shibagaki, Fuchu, JP;
Masataka Satoh, Sagamihara, JP;
Akemi Satoh, legal representative, Sagamihara, JP;
Takahiro Sugimoto, Yokohama, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate () and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate () in which the plasma irradiation is performed.