The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2012

Filed:

Oct. 26, 2010
Applicants:

LI Min Lin, Hong Kong, HK;

Ka Wah Chan, Hong Kong, HK;

Sheng Mei Zheng, Shenzhen, CN;

Yong Cai, Suzhou, CN;

Inventors:

Li Min Lin, Hong Kong, HK;

Ka Wah Chan, Hong Kong, HK;

Sheng Mei Zheng, Shenzhen, CN;

Yong Cai, Suzhou, CN;

Assignee:

Hong Kong Applied Science and Technology Research Institute Company Limited, Hong Kong Science Park, Shatin, New Territories, Hong Kong, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/46 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method of fabricating vertical LED structures in which the substrate used for epitaxial layer growth is removed through polishing. The polishing technique used in an exemplary embodiment is chemical mechanical polishing using polish stops to provide a sufficiently level plane. Polish stops are provided in the multilayer structure before polishing the surface, the hardness of the polish stop material being greater than the hardness of the material that needs to be removed. Consequently, vertical LEDs can be produced at a lower cost and higher yield compared to either laser lift-off or conventional polishing. Exemplary vertical LEDs are GaN LEDs. The polish stops may be removed by saw dicing, laser dicing or plasma etching.


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