The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Oct. 11, 2006
Toshimichi Kubota, Hiratsuka, JP;
Eiichi Kawasaki, Hiratsuka, JP;
Tsuneaki Tomonaga, Hiratsuka, JP;
Shinichi Kawazoe, Kanagawa, JP;
Toshimichi Kubota, Hiratsuka, JP;
Eiichi Kawasaki, Hiratsuka, JP;
Tsuneaki Tomonaga, Hiratsuka, JP;
Shinichi Kawazoe, Kanagawa, JP;
Sumco Techxiv Corporation, Nagasaki, JP;
Abstract
In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wallwhich defines a chamber inner wallof a chamber, a crucibleand a heater. The wallis formed by three members, namely, a single crystal side flow-straightening member, a melt surface side flow-straightening memberand a heater side flow-straightening member, which are connected to form a purge gas directing path. When the semiconductor single crystal is pulled, a flow speed of a purge gas that passes through the vicinity of the surface of the melt in a quartz crucibleis controlled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile