The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Oct. 04, 2002
Igor J. Malik, Palo Alto, CA (US);
Sien G. Kang, Dublin, CA (US);
Martin Fuerfanger, San Jose, CA (US);
Harry Kirk, Campbell, CA (US);
Ariel Flat, Palo Alto, CA (US);
Michael Ira Current, San Jose, CA (US);
Philip James Ong, Milpitas, CA (US);
Igor J. Malik, Palo Alto, CA (US);
Sien G. Kang, Dublin, CA (US);
Martin Fuerfanger, San Jose, CA (US);
Harry Kirk, Campbell, CA (US);
Ariel Flat, Palo Alto, CA (US);
Michael Ira Current, San Jose, CA (US);
Philip James Ong, Milpitas, CA (US);
Silicon Genesis Corporation, San Jose, CA (US);
Abstract
The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.