The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2012

Filed:

Feb. 12, 2009
Applicants:

Takamasa Ichino, Kudamatsu, JP;

Ryoji Nishio, Kudamatsu, JP;

Tomoyuki Tamura, Kudamatsu, JP;

Shinji Obama, Kudamatsu, JP;

Inventors:

Takamasa Ichino, Kudamatsu, JP;

Ryoji Nishio, Kudamatsu, JP;

Tomoyuki Tamura, Kudamatsu, JP;

Shinji Obama, Kudamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/00 (2006.01); B05C 11/00 (2006.01); H01J 7/24 (2006.01); H05B 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.


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