The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Dec. 01, 2008
Applicants:

Chung-yi Lee, Boise, ID (US);

Ezequiel Vidal-russell, Boise, ID (US);

Inventors:

Chung-Yi Lee, Boise, ID (US);

Ezequiel Vidal-Russell, Boise, ID (US);

Assignee:

Micron Technologies, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 27/52 (2006.01); G03B 27/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

Several embodiments of photolithography devices and associated methods of focal calibration are disclosed herein. In one embodiment, a method for determining a focus shift in a photolithography system include placing a microelectronic substrate on a substrate support of the photolithography system and producing first and second refraction patterns on the photoresist layer corresponding to first and second grating patterns, respectively, of a single reticle by illuminating the first and second grating patterns with an asymmetric monopole source perpendicular to the first and second grating patterns. The method further includes measuring an image shift between the first and second refraction patterns on the photoresist layer and determining a defocus shift of the illumination source based on the image shift.


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