The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Sep. 04, 2007
Applicants:
Yu-min Lin, Hsinchu, TW;
Feng-yuan Gan, Hsinchu, TW;
Inventors:
Yu-Min Lin, Hsinchu, TW;
Feng-Yuan Gan, Hsinchu, TW;
Assignee:
Au Optronics Corp., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.
Quick Actions:
Lin, Yu-Min. (2012). Thin film transistor structure (U.S. Patent No. 8184226). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8184226
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile