The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8183701 B1

PDF
Full Text
Expired
Date of Patent:
May. 22, 2012

Filed:

Jul. 29, 2009
Applicants:

Chi-yuan Shih, Hsinchu, TW;

Sophia Wang, Xin-Zhu, TW;

Heng-hsin Liu, Yonghe, TW;

Heng-jen Lee, Baoshan Township, Hsinchu County, TW;

Inventors:

Chi-Yuan Shih, Hsinchu, TW;

Sophia Wang, Xin-Zhu, TW;

Heng-Hsin Liu, Yonghe, TW;

Heng-Jen Lee, Baoshan Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; a plurality of material layers formed on the semiconductor substrate, each of the material layers including a circuit pattern therein; and a plurality of diffraction-based periodic marks formed in the plurality of material layers and stacked in a same region. One of the diffraction-based periodic marks is different from at least one other of the diffraction-based periodic marks in pitch.


Find Patent Forward Citations

Shih, Chi-Yuan. (2012). Structure of stacking scatterometry based overlay marks for marks footprint reduction (U.S. Patent No. 8183701). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8183701

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