The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Feb. 01, 2011
Seiji Matsuyama, Kyoto, JP;
Toshio Nakanishi, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Hikaru Adachi, Amagasaki, JP;
Koichi Takatsuki, Nirasaki, JP;
Yoshihiro Sato, Amagasaki, JP;
Seiji Matsuyama, Kyoto, JP;
Toshio Nakanishi, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Hikaru Adachi, Amagasaki, JP;
Koichi Takatsuki, Nirasaki, JP;
Yoshihiro Sato, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.