The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Dec. 20, 2010
David M. Permana, Fishkill, NY (US);
Ravi P. Srivastava, Fishkill, NY (US);
Haifeng Sheng, Beacon, NY (US);
Dimitri R. Kioussis, White Plains, NY (US);
David M. Permana, Fishkill, NY (US);
Ravi P. Srivastava, Fishkill, NY (US);
Haifeng Sheng, Beacon, NY (US);
Dimitri R. Kioussis, White Plains, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method of fabricating a semiconductor device is provided. The method begins by providing a semiconductor device structure having electronic devices formed on a semiconductor substrate, and having an upper metal layer associated with electrical contacts for the electronic devices. The method continues by forming a diffusion barrier layer overlying the upper metal layer. Next, the method deposits a first layer of graded ultra-low-k (ULK) material overlying the diffusion barrier layer, a layer of ULK material overlying the first layer of graded ULK material, and a second layer of graded ULK material overlying the layer of ULK material. The method continues by depositing a layer of low temperature oxide material overlying the second layer of graded ULK material, and forming a layer of metal hard mask material overlying the layer of low temperature oxide material.