The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Oct. 19, 2009
Sangjin Hyun, Gyeonggi-do, KR;
Siyoung Choi, Gyeonggi-do, KR;
Yugyun Shin, Gyeonggi-do, KR;
Kang-ill Seo, Gyeonggi-do, KR;
Hagju Cho, Gyeonggi-do, KR;
Hoonjoo NA, Gyeonggi-do, KR;
Hyosan Lee, Gyeonggi-do, KR;
Jun-woong Park, Gyeonggi-do, KR;
Hye-lan Lee, Gyeonggi-do, KR;
Hyung-seok Hong, Seoul, KR;
Sangjin Hyun, Gyeonggi-do, KR;
Siyoung Choi, Gyeonggi-do, KR;
Yugyun Shin, Gyeonggi-do, KR;
Kang-Ill Seo, Gyeonggi-do, KR;
Hagju Cho, Gyeonggi-do, KR;
Hoonjoo Na, Gyeonggi-do, KR;
Hyosan Lee, Gyeonggi-do, KR;
Jun-Woong Park, Gyeonggi-do, KR;
Hye-Lan Lee, Gyeonggi-do, KR;
Hyung-Seok Hong, Seoul, KR;
Abstract
Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.