The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Feb. 15, 2010
Krupakar M. Subramanian, Boise, ID (US);
Mirzafer Abatchev, Boise, ID (US);
Krupakar M. Subramanian, Boise, ID (US);
Mirzafer Abatchev, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a nanoimprint lithography template are placed within the first patterning material, wherein the blades extend along the base in a first direction. With the blades within the first patterning material, the first patterning material are cured. The blades are removed from the first patterning material to form a patterned first patterning material. The base is etched using the patterned first patterning material as a pattern to form openings in the base. The patterned first patterning material is removed from the base. A second patterning material is formed over the base and within the openings in the base. Blades of a nanoimprint lithography template are placed within the second patterning material, wherein the blades extend along the base in a second direction, which is generally perpendicular with respect to the first direction. With the blades within the second patterning material, the second patterning material is cured. The blades are removed from the second patterning material to form a patterned second patterning material. The base is etched using the patterned second patterning material as a pattern to form openings in the base. The patterned second patterning material is removed from the base.