The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Nov. 19, 2010
Seong-hoon Jeong, Masan-si, KR;
Dong-chan Kim, Anyang-si, KR;
Yu-gyun Shin, Seongnam-si, KR;
Soo-jin Hong, Guri-si, KR;
Deok-hyung Lee, Seoul, KR;
Seong-Hoon Jeong, Masan-si, KR;
Dong-Chan Kim, Anyang-si, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Soo-Jin Hong, Guri-si, KR;
Deok-Hyung Lee, Seoul, KR;
Abstract
Provided are a method of forming an insulating layer and a method of manufacturing a transistor using the method. The method of forming the insulating layer includes forming a preliminary insulating layer including silicon oxide (SiO) on a silicon (Si)-containing substrate. A reactive gas containing ammonia (NH) gas is supplied to the preliminary insulating layer. Nitrogen radicals (N*) and hydrogen radicals (H*) are generated from the ammonia gas using plasma. The hydrogen radicals combine with oxygen of the preliminary insulating layer, and the nitrogen radicals combine with the silicon oxide so that an insulating layer including hydroxides (OH) and silicon oxynitride (SiON) can be formed.