The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jul. 16, 2010
Hiroyuki Ogawa, Nara, JP;
Noritaka Akita, Hiratsuka, JP;
Yukio Taniguchi, Yokohama, JP;
Masato Hiramatsu, Tokyo, JP;
Masayuki Jyumonji, Yokohama, JP;
Masakiyo Matsumura, Kamakura, JP;
Hiroyuki Ogawa, Nara, JP;
Noritaka Akita, Hiratsuka, JP;
Yukio Taniguchi, Yokohama, JP;
Masato Hiramatsu, Tokyo, JP;
Masayuki Jyumonji, Yokohama, JP;
Masakiyo Matsumura, Kamakura, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.