The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jul. 26, 2006
Kuan Fu Chen, Taipei, TW;
Yin Jen Chen, Taipei, TW;
Meng Hsuan Weng, Taichung, TW;
Tzung Ting Han, Yilan, TW;
Ming Shang Chen, Hsinchu, TW;
Chun Pei Wu, Nantou, TW;
Kuan Fu Chen, Taipei, TW;
Yin Jen Chen, Taipei, TW;
Meng Hsuan Weng, Taichung, TW;
Tzung Ting Han, Yilan, TW;
Ming Shang Chen, Hsinchu, TW;
Chun Pei Wu, Nantou, TW;
Abstract
A method for fabricating a floating gate memory device comprises using self-aligned process for formation of a fourth poly layer over a partial gate structure that does not require an additional photolithographic step. Accordingly, enhanced device reliability can be achieved because a higher GCR can be maintained with lower gate bias levels. In addition, process complexity can be reduced, which can increase throughput and reduce device failures.