The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Aug. 22, 2008
Applicant:
Sumio Ogawa, Tokyo, JP;
Inventor:
Sumio Ogawa, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An element isolation region exists at a side opposite to a diffusion layer region as seen from a channel region, without another electrode to which the same potential as one applied to the diffusion layer region is applied interposed between the channel region and the element isolation region. The electric field applied to the gate insulating film is not uniform and the magnitude of the electric field is increased when approaching closer to the diffusion layer region. Therefore, breakdown is likely to occur at parts closer to the diffusion layer region.