The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Oct. 27, 2011
Sung-nien Tang, Hsinchu County, TW;
Wei-lun Hsu, Hsin-Chu Hsien, TW;
Ching-ming Lee, Miaoli County, TW;
Te-yuan Wu, Hsin-Chu, TW;
Sung-Nien Tang, Hsinchu County, TW;
Wei-Lun Hsu, Hsin-Chu Hsien, TW;
Ching-Ming Lee, Miaoli County, TW;
Te-Yuan Wu, Hsin-Chu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for operating a semiconductor device including a lateral double diffused metal oxide semiconductor (LDMOS) with a first source, a common drain and a first gate, a junction field effect transistor (JFET) with a second source, the common drain and a second gate wherein the second source is electrically connected to the first gate and an inner circuit electrically connected to the first source is provided. The first source provides the inner circuit with an inner current to generate an inner voltage by means of the lateral double diffused metal oxide semiconductor, and the lateral double diffused metal oxide semiconductor turns off when the inner voltage is elevated substantially as high as the first gate voltage.