The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2012

Filed:

Nov. 18, 2008
Applicants:

Insik Jin, Eagan, MN (US);

Wei Tian, Bloomington, MN (US);

Venugopalan Vaithyanathan, Bloomington, MN (US);

Cedric Bedoya, Edina, MN (US);

Markus Siegert, Minneapolis, MN (US);

Inventors:

Insik Jin, Eagan, MN (US);

Wei Tian, Bloomington, MN (US);

Venugopalan Vaithyanathan, Bloomington, MN (US);

Cedric Bedoya, Edina, MN (US);

Markus Siegert, Minneapolis, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
Abstract

A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.


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