The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jul. 28, 2009
Andrew Clark, Los Altos, CA (US);
Robin Smith, Mountain View, CA (US);
Richard Sewell, Palo Alto, CA (US);
Scott Semans, Sunnyvale, CA (US);
Andrew Clark, Los Altos, CA (US);
Robin Smith, Mountain View, CA (US);
Richard Sewell, Palo Alto, CA (US);
Scott Semans, Sunnyvale, CA (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.