The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jun. 28, 2011
Yung-fa Lin, Hsinchu, TW;
Shou-yi Hsu, Hsinchu County, TW;
Meng-wei Wu, Hsinchu, TW;
Main-gwo Chen, Hsinchu County, TW;
Jing-qing Chan, Taipei, TW;
Yi-chun Shih, Nantou County, TW;
Yung-Fa Lin, Hsinchu, TW;
Shou-Yi Hsu, Hsinchu County, TW;
Meng-Wei Wu, Hsinchu, TW;
Main-Gwo Chen, Hsinchu County, TW;
Jing-Qing Chan, Taipei, TW;
Yi-Chun Shih, Nantou County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A method for forming a power device includes the following steps. An epitaxial layer is formed on a substrate. A pad layer and hard mask are formed on the epitaxial layer. A trench is etched into the hard mask, the pad layer, and the epitaxial layer. The hard mask is removed. A buffer layer is formed on the sidewall of the trench. The trench is then filled with a dopant source layer comprising plural dopants. A drive-in process is performed to diffuse the dopants into the epitaxial layer through the buffer layer, thereby forming a diffusion region around the trench.