The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Feb. 18, 2010
Masashi Nakabayashi, Futtu, JP;
Tatsuo Fujimoto, Futtu, JP;
Mitsuru Sawamura, Futtu, JP;
Noboru Ohtani, Futtu, JP;
Masashi Nakabayashi, Futtu, JP;
Tatsuo Fujimoto, Futtu, JP;
Mitsuru Sawamura, Futtu, JP;
Noboru Ohtani, Futtu, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×10atoms/cmand the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×10Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m/g or less.