The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Sep. 03, 2008
Hiroto Komiyama, Tokyo, JP;
Hirokazu Komuro, Yokohama, JP;
Satoshi Ibe, Yokohama, JP;
Takuya Hatsui, Tokyo, JP;
Keisuke Kishimoto, Yokohama, JP;
Shimpei Otaka, Yokohama, JP;
Sadayoshi Sakuma, Yokohama, JP;
Hiroto Komiyama, Tokyo, JP;
Hirokazu Komuro, Yokohama, JP;
Satoshi Ibe, Yokohama, JP;
Takuya Hatsui, Tokyo, JP;
Keisuke Kishimoto, Yokohama, JP;
Shimpei Otaka, Yokohama, JP;
Sadayoshi Sakuma, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for manufacturing a substrate for a liquid discharge head having a silicon substrate provided with a supply port of a liquid comprises steps of preparing a substrate which is provided with a passive film on one side face thereof, has a first recess and a second recess provided therein so as to penetrate from the one side face into the inner part through the passive film, wherein the recesses satisfy a relation of a ×tan 54.7 degrees≦d, where a is defined as a distance between the first recess and the second recess, and d is defined as a depth of the second recess, and forming the supply port by anisotropically etching the crystal from the one side face.