The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
May. 30, 2007
Tsung-lin Lee, Hsinchu, TW;
Chang-yun Chang, Taipei, TW;
Sheng-da Liu, Hsinchu, TW;
Fu-liang Yang, Hsinchu, TW;
Tsung-Lin Lee, Hsinchu, TW;
Chang-Yun Chang, Taipei, TW;
Sheng-Da Liu, Hsinchu, TW;
Fu-Liang Yang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET includes a first fin; and a first gate electrode over a top surface and sidewalls of the first fin. The second FinFET includes a second fin spaced apart from the first fin by a fin space; and a second gate electrode over a top surface and sidewalls of the second fin. The second gate electrode is electrically disconnected from the first gate electrode. The first and the second gate electrodes have a gate height greater than about one half of the fin space.