The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Apr. 16, 2010
Ki-hun Jeong, Cheongan-si, KR;
Byeong-hoon Cho, Seoul, KR;
Jung-suk Bang, Guri-si, KR;
Sang-youn Han, Seoul, KR;
Woong-kwon Kim, Cheonan-si, KR;
Sung-hoon Yang, Seoul, KR;
Suk Won Jung, Goyang-si, KR;
Dae-cheol Kim, Suwon-si, KR;
Kyung-sook Jeon, Yongin-si, KR;
Seung MI Seo, Seoul, KR;
Ki-Hun Jeong, Cheongan-si, KR;
Byeong-Hoon Cho, Seoul, KR;
Jung-Suk Bang, Guri-si, KR;
Sang-Youn Han, Seoul, KR;
Woong-Kwon Kim, Cheonan-si, KR;
Sung-Hoon Yang, Seoul, KR;
Suk Won Jung, Goyang-si, KR;
Dae-Cheol Kim, Suwon-si, KR;
Kyung-Sook Jeon, Yongin-si, KR;
Seung Mi Seo, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.