The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Mar. 29, 2007
Kaushik Chattopadhyay, San Jose, CA (US);
Keith Fox, Portland, OR (US);
Tom Mountsier, San Jose, CA (US);
Hui-jung Wu, Fremont, CA (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Kimberly Branshaw, Santa Clara, CA (US);
Kaushik Chattopadhyay, San Jose, CA (US);
Keith Fox, Portland, OR (US);
Tom Mountsier, San Jose, CA (US);
Hui-Jung Wu, Fremont, CA (US);
Bart van Schravendijk, Sunnyvale, CA (US);
Kimberly Branshaw, Santa Clara, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.