The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Apr. 01, 2008
Masao Urayama, Osaka, JP;
Masashi Kawasaki, Sendai, JP;
Hideo Ohno, Sendai, JP;
Sharp Kabushiki Kaisha, Osaka-Shi, Osaka, JP;
Tohoku University, Sendai-Shi, Miyagi, JP;
Abstract
A thin-film transistor () of the present invention includes an insulating substrate (), a gate electrode () which has a predetermined shape and is formed on the insulating substrate (), a gate insulating film () formed on the gate electrode (), and a semiconductor layer () which is polycrystalline ZnO and is formed on the gate insulating film (). The semiconductor layer () is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode () and a drain electrode () are formed so as to have a predetermined shape. Next, a protection layer () is formed on the source electrode () and the drain electrode (). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.