The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Dec. 29, 2009
Jenq-dar Tsay, Kaohsiung, TW;
Suh-fang Lin, Hsinchu County, TW;
Yu-hsiang Chang, Hsinchu County, TW;
Yih-der Guo, Hsinchu, TW;
Sheng-huei Kuo, Pingtung County, TW;
Wei-hung Kuo, Hsinchu, TW;
Hsun-chih Liu, Taipei County, TW;
Jenq-Dar Tsay, Kaohsiung, TW;
Suh-Fang Lin, Hsinchu County, TW;
Yu-Hsiang Chang, Hsinchu County, TW;
Yih-Der Guo, Hsinchu, TW;
Sheng-Huei Kuo, Pingtung County, TW;
Wei-Hung Kuo, Hsinchu, TW;
Hsun-Chih Liu, Taipei County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.