The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Aug. 05, 2010
Tomomasa Ueda, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Naoharu Shimomura, Sagamihara, JP;
Masahiko Nakayama, Fuchu, JP;
Sumio Ikegawa, Musashino, JP;
Keiji Hosotani, Sagamihara, JP;
Makoto Nagamine, Komae, JP;
Tomomasa Ueda, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Naoharu Shimomura, Sagamihara, JP;
Masahiko Nakayama, Fuchu, JP;
Sumio Ikegawa, Musashino, JP;
Keiji Hosotani, Sagamihara, JP;
Makoto Nagamine, Komae, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.