The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 28, 2009
Applicants:
Jeng-hwa Liao, Hsinchu, TW;
Jung-yu Shieh, Hsinchu, TW;
Ling-wuu Yang, Hsinchu, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.