The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Feb. 03, 2010
Masato Endo, Ashigarakami-gun, JP;
Itaru Kawabata, Yokohama, JP;
Shinichi Watanabe, Yokohama, JP;
Hiroyuki Nitta, Yokohama, JP;
Takuya Futatsuyama, Yokohama, JP;
Masato Endo, Ashigarakami-gun, JP;
Itaru Kawabata, Yokohama, JP;
Shinichi Watanabe, Yokohama, JP;
Hiroyuki Nitta, Yokohama, JP;
Takuya Futatsuyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor.