The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Jan. 09, 2006
Yueh-you Chen, Hsin-Chu, TW;
Chung-long Chang, Dou-Liu, TW;
Chih-ping Chao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
System and method for an improved interdigitated capacitive structure for an integrated circuit. A preferred embodiment comprises a first layer of a sequence of substantially parallel interdigitated strips, each strip of either a first polarity or a second polarity, the sequence alternating between a strip of the first polarity and a strip of the second polarity. A first dielectric layer is deposited over each strip of the first layer of strips. A first extension layer of a sequence of substantially interdigitated extension strips is deposited over the first dielectric layer, each extension strip deposited over a strip of the first layer of the opposite polarity. A first sequence of vias is coupled to the first extension layer, each via deposited over an extension strip of the same polarity. A second layer of a sequence of substantially parallel interdigitated strips can be coupled to the first sequence of vias.