The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Feb. 27, 2008
Applicants:
Hidefumi Hiura, Minato-ku, JP;
Fumiyuki Nihei, Minato-ku, JP;
Tetsuya Tada, Tsukuba, JP;
Toshihiko Kanayama, Tsukuba, JP;
Inventors:
Hidefumi Hiura, Minato-ku, JP;
Fumiyuki Nihei, Minato-ku, JP;
Tetsuya Tada, Tsukuba, JP;
Toshihiko Kanayama, Tsukuba, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.