The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 18, 2009
Xinyu Fu, Fremont, CA (US);
Keyvan Kashefizadeh, Dublin, CA (US);
Ashish Subhash Bodke, San Jose, CA (US);
Winsor Lam, Daly City, CA (US);
Yiochiro Tanaka, Santa Clara, CA (US);
Wonwoo Kim, San Jose, CA (US);
Xinyu Fu, Fremont, CA (US);
Keyvan Kashefizadeh, Dublin, CA (US);
Ashish Subhash Bodke, San Jose, CA (US);
Winsor Lam, Daly City, CA (US);
Yiochiro Tanaka, Santa Clara, CA (US);
Wonwoo Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.