The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2012

Filed:

Jun. 05, 2009
Applicants:

Peter Borden, San Mateo, CA (US);

Michael P. Stewart, Mountain View, CA (US);

LI Xu, Santa Clara, CA (US);

Hemant P. Mungekar, Campbell, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Inventors:

Peter Borden, San Mateo, CA (US);

Michael P. Stewart, Mountain View, CA (US);

Li Xu, Santa Clara, CA (US);

Hemant P. Mungekar, Campbell, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0216 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.


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