The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2012

Filed:

Feb. 04, 2010
Applicants:

Matthew Lipson, Stamford, CT (US);

Robert D. Harned, Redding, CT (US);

Geoffrey O'connor, Easton, CT (US);

Timothy O'neil, New Milford, CT (US);

Inventors:

Matthew Lipson, Stamford, CT (US);

Robert D. Harned, Redding, CT (US);

Geoffrey O'Connor, Easton, CT (US);

Timothy O'Neil, New Milford, CT (US);

Assignee:

ASML Holding N.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 65/00 (2006.01); B05D 1/36 (2006.01); C03B 29/00 (2006.01); C09J 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.


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