The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Apr. 07, 2009
Tsung-yi Chou, Hsinchu, TW;
Loen-shien Tsai, Hsinchu, TW;
Tsung-Yi Chou, Hsinchu, TW;
Loen-Shien Tsai, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
The invention provides a method for reading a first data storage of a memory cell. The method comprises sensing a first current of the memory cell by applying a first bit line voltage on the memory cell. When the first current is larger than a first reference current with respect to the first bit line voltage, the first data storage is determined to be at an un-programmed state. Otherwise, a second current of the memory cell is sensed by applying a second bit line voltage on the memory cell. When the difference between the first current and the second current is larger than the difference between the first reference current and the second reference current, the first data storage is determined to be at the un-programmed state. Otherwise, the first data storage is determined to be at a programmed state.