The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Sep. 22, 2009
Applicants:
Chih-sheng Lin, Tainan County, TW;
Chih-wen Hsiao, Hsinchu County, TW;
Keng-li Su, Hsinchu, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 23/62 (2006.01); H01L 23/48 (2006.01); H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-inductance-capacitance (RLC) device, and at least one ESD device which is disposed in the substrate and electrically connected to one end of the TSV device. The ESD structure can protect the 3D IC TSV device.