The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2012

Filed:

Sep. 16, 2008
Applicants:

Wen Shi, Shanghai, CN;

Wei Wei Ruan, Shanghai, CN;

Inventors:

Wen Shi, Shanghai, CN;

Wei Wei Ruan, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

Multi-purpose poly edge test structure. According to an embodiment, the present invention provides a test structure. The test structure includes a doped silicon substrate, the doped silicon substrate being grounded, the doped silicon substrate including a first gate structure and a second gate structure, the first and second gate structures overlaying the doped silicon substrate. The test structure also includes a first conducting pad being electrically coupled to the first gate structure. The test structure also includes a second conducting pad being electrically coupled to the second gate structure.


Find Patent Forward Citations

Shi, Wen. (2012). Multi-purpose poly edge test structure (U.S. Patent No. 8164091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8164091

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…