The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Dec. 06, 2006
Gi Ra Yi, Daejeon, KR;
Jong Pil Kim, Daejeon, KR;
Jung Hee Lee, Gwacheon-si, KR;
Kwang Ik Moon, Daejeon, KR;
Chang Bum Ko, Daejeon, KR;
Soon Ho Jang, Seoul, KR;
Seung Beom Cho, Daejeon, KR;
Young Jun Hong, Daejeon, KR;
Gi Ra Yi, Daejeon, KR;
Jong Pil Kim, Daejeon, KR;
Jung Hee Lee, Gwacheon-si, KR;
Kwang Ik Moon, Daejeon, KR;
Chang Bum Ko, Daejeon, KR;
Soon Ho Jang, Seoul, KR;
Seung Beom Cho, Daejeon, KR;
Young Jun Hong, Daejeon, KR;
LG Chem, Ltd., Seoul, KR;
Abstract
Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.