The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Mar. 27, 2009
Jeng-jiun Yang, Sunnyvale, CA (US);
Constantin Bulucea, Sunnyvale, CA (US);
Sandeep R. Bahl, Palo Alto, CA (US);
Jeng-Jiun Yang, Sunnyvale, CA (US);
Constantin Bulucea, Sunnyvale, CA (US);
Sandeep R. Bahl, Palo Alto, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An asymmetric insulated-gate field effect transistor (U orU) is provided along an upper surface of a semiconductor body so as to have first and second source/drain zones (andorand) laterally separated by a channel zone (or) of the transistor's body material. A gate electrode (or) overlies a gate dielectric layer (or) above the channel zone. A pocket portion (or) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima at respective locations (PH--PH--NH-) spaced apart from one another. This typically enables the transistor to have reduced current leakage.