The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8163445 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 24, 2012

Filed:

Dec. 30, 2008
Applicant:

Sung Hyun OH, Cheongju-si, KR;

Inventor:

Sung Hyun Oh, Cheongju-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
Abstract

An EUV mask comprises a multi-reflecting layer is formed over a substrate and reflecting EUV light; an absorber layer pattern defining a sidewall formed over the multi-reflecting layer formed and selectively exposing a region of the multi-reflecting layer; and a reflecting spacer which additionally reflects the EUV light at the sidewall of the absorber layer pattern.


Find Patent Forward Citations

Oh, Sung. (2012). Extreme ultraviolet mask and method for fabricating the same (U.S. Patent No. 8163445). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8163445

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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