The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Mar. 27, 2009
Thomas Hauet, San Jose, CA (US);
Olav Hellwig, San Jose, CA (US);
Manfred Ernst Schabes, Saratoga, CA (US);
Thomas Hauet, San Jose, CA (US);
Olav Hellwig, San Jose, CA (US);
Manfred Ernst Schabes, Saratoga, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
Multiple anisotropy layered magnetic structures for controlling reversal mechanism and tightening of switching field distribution in bit patterned media are disclosed. The invention extends the exchange spring concept to more variable and sophisticated structures. Three or more layers with different anisotropy or anisotropy gradients increase writeability gains beyond the simple hard/soft bilayer exchange spring concept for BPM. The structures have a thin very hard, high anisotropy center layer that acts as a threshold or pinning layer for domain wall propagation through the entire media structure. In addition or alternatively, a thin very soft, low anisotropy center layer in between the commonly used soft surface layer and hard media layer allows quick initial propagation of the domain wall into the center of the media structure. Various properties of the media structures can be tuned more independently for optimization if using more advanced multi-anisotropy layer stacks.