The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Jul. 23, 2009
H. Frank Greer, Pasadena, CA (US);
Todd J. Jones, Altadena, CA (US);
Richard P. Vasquez, Altadena, CA (US);
Michael E. Hoenk, Valencia, CA (US);
Matthew R. Dickie, Altadena, CA (US);
Shouleh Nikzad, Valencia, CA (US);
H. Frank Greer, Pasadena, CA (US);
Todd J. Jones, Altadena, CA (US);
Richard P. Vasquez, Altadena, CA (US);
Michael E. Hoenk, Valencia, CA (US);
Matthew R. Dickie, Altadena, CA (US);
Shouleh Nikzad, Valencia, CA (US);
Abstract
A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.